| PART |
Description |
Maker |
| TPCP8H01 |
TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
| MT3S03AU |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
Toshiba Semiconductor
|
| MT3S06S |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC5279 |
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| MT6L04AT |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPEl
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SC5859 |
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
|
TOSHIBA
|
| 2SD2638 |
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
|
TOSHIBA[Toshiba Semiconductor]
|
| RN1611 RN1610 |
TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
| RN1414 RN1417 RN1415 RN1416 RN1418 |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC1815 |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
|
Toshiba Semiconductor
|
